We present a macroscopic model for electron transport in silicon, in which the state variables are moments of the electron distribution functions. The evolution equations are obtained from the Boltzmann transport equations and are closed by means of the maximum entropy principle (MEP). Analytic approximations are used for the electron and phonon dispersion relations. All the main scattering mechanisms electrons undergo in silicon are taken into account.

A macroscopic model for electron transport in silicon using analytical description for both the electron bands and phonon dispersion relations

ROMANO, Vittorio
2013-01-01

Abstract

We present a macroscopic model for electron transport in silicon, in which the state variables are moments of the electron distribution functions. The evolution equations are obtained from the Boltzmann transport equations and are closed by means of the maximum entropy principle (MEP). Analytic approximations are used for the electron and phonon dispersion relations. All the main scattering mechanisms electrons undergo in silicon are taken into account.
Dispersion relations ; phonons; semiconductors
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11769/87196
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