In order to investigate the role of self-heating effects on the electrical characteristics of sub-micron devices, we have implemented a Monte Carlo device simulator that includes the self-consistent solution of the heat transport equation, obtained in the framework of Extended Irreversible Thermodynamics. The lattice temperature is fed back into the electron transport solver through temperature dependent scattering tables. Simulation results for a n+−n−n+ diode are shown.
Analysis of Self-Heating Effects in Sub- Micron Silicon Devices with Electrothermal Monte Carlo Simulations
MUSCATO, Orazio;DI STEFANO, VINCENZA
2012-01-01
Abstract
In order to investigate the role of self-heating effects on the electrical characteristics of sub-micron devices, we have implemented a Monte Carlo device simulator that includes the self-consistent solution of the heat transport equation, obtained in the framework of Extended Irreversible Thermodynamics. The lattice temperature is fed back into the electron transport solver through temperature dependent scattering tables. Simulation results for a n+−n−n+ diode are shown.File in questo prodotto:
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