The symmetry analysis of the one dimensional quantum drift-diffusion model for semiconductors, based on the Bohm potential, is performed and example of exact solutions are given.
Symmetry Analysis for the quantum drif-diffusion model of semiconductors
ROMANO, Vittorio;TRACINA', RITA
2006-01-01
Abstract
The symmetry analysis of the one dimensional quantum drift-diffusion model for semiconductors, based on the Bohm potential, is performed and example of exact solutions are given.File in questo prodotto:
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