Sfoglia per Autore
LASER-INDUCED AS PROFILE BROADENING IN AMORPHOUS SILICON LAYERS
file da validare1979-01-01 Grimaldi, Maria Grazia; Baeri, P; Campisano, Su; Foti, G; Rimini, E.
SURFACE ACCUMULATION OF TE ATOMS IN LASER MELTED TE-IMPLANTED SILICON
file da validare1980-01-01 Campisano, Su; Baeri, P; Grimaldi, Maria Grazia; Foti, G; Rimini, E.
SOLUTE TRAPPING BY MOVING INTERFACE IN ION-IMPLANTED SILICON
file da validare1980-01-01 Campisano, Su; Foti, G; Baeri, P; Grimaldi, Maria Grazia; Rimini, E.
LOW-TEMPERATURE EPITAXIAL REGROWTH OF ION-IMPLANTED GAAS
file da validare1980-01-01 Grimaldi, Maria Grazia; Paine, Bm; Nicolet, Ma
LASER-INDUCED REORDER IN PB IMPLANTED GE
file da validare1980-01-01 Campisano, Su; Grimaldi, Maria Grazia; Baeri, P; Foti, G; Rimini, E.
LASER ANNEALING OF YB-IMPLANTED SI
file da validare1980-01-01 Campisano, Su; Grimaldi, Maria Grazia
ION-IMPLANTATION AND LOW-TEMPERATURE EPITAXIAL REGROWTH OF GAAS
file da validare1981-01-01 Grimaldi, Maria Grazia; Paine, Bm; Nicolet, Ma; Sadana, Dk
GE-SI HETEROSTRUCTURES BY CRYSTALLIZATION OF AMORPHOUS LAYERS
file da validare1981-01-01 Maenpaa, M; Hung, Ls; Grimaldi, Maria Grazia; Suni, I; Mayer, Jw; Nicolet, Ma
LASER ANNEALING OF BI IMPLANTED (111) AND (100) SILICON
file da validare1981-01-01 Campisano, Su; Baeri, P; Grimaldi, Maria Grazia; Bontemps, A; Danielou, R; Floccari, M; Bruel, M.
EPITAXIAL-GROWTH OF AMORPHOUS-GE FILMS DEPOSITED ON SINGLE-CRYSTAL GE
file da validare1981-01-01 Grimaldi, Maria Grazia; Maenpaa, M; Paine, Bm; Nicolet, Ma; Lau, Ss; Tseng, Wf
GERMANIDE FORMATION BY THERMAL-TREATMENT OF PLATINUM FILMS DEPOSITED ON SINGLE-CRYSTAL GE[100] SUBSTRATES
file da validare1981-01-01 Grimaldi, Maria Grazia; Wielunski, L; Nicolet, Ma; Tu, Kn
EPITAXIAL REGROWTH OF THIN AMORPHOUS GAAS-LAYERS
file da validare1981-01-01 Grimaldi, Maria Grazia; Paine, Bm; Maenpaa, M; Nicolet, Ma; Sadana, Dk
ION-BEAM MIXING IN AMORPHOUS-SILICON .1. EXPERIMENTAL INVESTIGATION
file da validare1981-01-01 Matteson, S; Paine, Bm; Grimaldi, Maria Grazia; Mezey, G; Nicolet, Ma
COMPENSATING IMPURITY EFFECT ON EPITAXIAL REGROWTH RATE OF AMORPHIZED SI
file da validare1982-01-01 Suni, I; Goltz, G; Grimaldi, Maria Grazia; Nicolet, Ma; Lau, Ss
EXPERIMENTAL INVESTIGATION OF THE AMORPHOUS-SILICON MELTING TEMPERATURE BY FAST HEATING PROCESSES
file da validare1982-01-01 Baeri, P; Campisano, Su; Grimaldi, Maria Grazia; Rimini, E.
EPITAXIAL NISI2 FORMATION BY PULSED LASER IRRADIATION OF THIN NI LAYERS DEPOSITED ON SI SUBSTRATES
file da validare1983-01-01 Grimaldi, Maria Grazia; Baeri, P; Rimini, E; Celotti, G.
PULSED LASER IRRADIATION OF NICKEL THIN-FILMS ON SILICON
file da validare1983-01-01 Baeri, P; Grimaldi, Maria Grazia; Rimini, E; Celotti, G.
LASER-INDUCED FREE-CARRIER ABSORPTION IN SI SINGLE-CRYSTAL
file da validare1984-01-01 Grimaldi, Maria Grazia; Baeri, P; Rimini, E.
ION-BEAM AND TEMPERATURE ANNEALING DURING HIGH-DOSE IMPLANTS
file da validare1985-01-01 Cannavo, S; Grimaldi, Maria Grazia; Rimini, E; Ferla, G; Gandolfi, L.
EVIDENCE OF INTERFACIAL MELTING DURING PULSED LASER IRRADIATION OF NI2SI ON SI
file da validare1987-01-01 Grimaldi, Maria Grazia; Priolo, Francesco; Baeri, P; Rimini, E; Cullis, Ag; Chew, Ng
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
LASER-INDUCED AS PROFILE BROADENING IN AMORPHOUS SILICON LAYERS | 1-gen-1979 | Grimaldi, Maria Grazia; Baeri, P; Campisano, Su; Foti, G; Rimini, E. | file da validare |
SURFACE ACCUMULATION OF TE ATOMS IN LASER MELTED TE-IMPLANTED SILICON | 1-gen-1980 | Campisano, Su; Baeri, P; Grimaldi, Maria Grazia; Foti, G; Rimini, E. | file da validare |
SOLUTE TRAPPING BY MOVING INTERFACE IN ION-IMPLANTED SILICON | 1-gen-1980 | Campisano, Su; Foti, G; Baeri, P; Grimaldi, Maria Grazia; Rimini, E. | file da validare |
LOW-TEMPERATURE EPITAXIAL REGROWTH OF ION-IMPLANTED GAAS | 1-gen-1980 | Grimaldi, Maria Grazia; Paine, Bm; Nicolet, Ma | file da validare |
LASER-INDUCED REORDER IN PB IMPLANTED GE | 1-gen-1980 | Campisano, Su; Grimaldi, Maria Grazia; Baeri, P; Foti, G; Rimini, E. | file da validare |
LASER ANNEALING OF YB-IMPLANTED SI | 1-gen-1980 | Campisano, Su; Grimaldi, Maria Grazia | file da validare |
ION-IMPLANTATION AND LOW-TEMPERATURE EPITAXIAL REGROWTH OF GAAS | 1-gen-1981 | Grimaldi, Maria Grazia; Paine, Bm; Nicolet, Ma; Sadana, Dk | file da validare |
GE-SI HETEROSTRUCTURES BY CRYSTALLIZATION OF AMORPHOUS LAYERS | 1-gen-1981 | Maenpaa, M; Hung, Ls; Grimaldi, Maria Grazia; Suni, I; Mayer, Jw; Nicolet, Ma | file da validare |
LASER ANNEALING OF BI IMPLANTED (111) AND (100) SILICON | 1-gen-1981 | Campisano, Su; Baeri, P; Grimaldi, Maria Grazia; Bontemps, A; Danielou, R; Floccari, M; Bruel, M. | file da validare |
EPITAXIAL-GROWTH OF AMORPHOUS-GE FILMS DEPOSITED ON SINGLE-CRYSTAL GE | 1-gen-1981 | Grimaldi, Maria Grazia; Maenpaa, M; Paine, Bm; Nicolet, Ma; Lau, Ss; Tseng, Wf | file da validare |
GERMANIDE FORMATION BY THERMAL-TREATMENT OF PLATINUM FILMS DEPOSITED ON SINGLE-CRYSTAL GE[100] SUBSTRATES | 1-gen-1981 | Grimaldi, Maria Grazia; Wielunski, L; Nicolet, Ma; Tu, Kn | file da validare |
EPITAXIAL REGROWTH OF THIN AMORPHOUS GAAS-LAYERS | 1-gen-1981 | Grimaldi, Maria Grazia; Paine, Bm; Maenpaa, M; Nicolet, Ma; Sadana, Dk | file da validare |
ION-BEAM MIXING IN AMORPHOUS-SILICON .1. EXPERIMENTAL INVESTIGATION | 1-gen-1981 | Matteson, S; Paine, Bm; Grimaldi, Maria Grazia; Mezey, G; Nicolet, Ma | file da validare |
COMPENSATING IMPURITY EFFECT ON EPITAXIAL REGROWTH RATE OF AMORPHIZED SI | 1-gen-1982 | Suni, I; Goltz, G; Grimaldi, Maria Grazia; Nicolet, Ma; Lau, Ss | file da validare |
EXPERIMENTAL INVESTIGATION OF THE AMORPHOUS-SILICON MELTING TEMPERATURE BY FAST HEATING PROCESSES | 1-gen-1982 | Baeri, P; Campisano, Su; Grimaldi, Maria Grazia; Rimini, E. | file da validare |
EPITAXIAL NISI2 FORMATION BY PULSED LASER IRRADIATION OF THIN NI LAYERS DEPOSITED ON SI SUBSTRATES | 1-gen-1983 | Grimaldi, Maria Grazia; Baeri, P; Rimini, E; Celotti, G. | file da validare |
PULSED LASER IRRADIATION OF NICKEL THIN-FILMS ON SILICON | 1-gen-1983 | Baeri, P; Grimaldi, Maria Grazia; Rimini, E; Celotti, G. | file da validare |
LASER-INDUCED FREE-CARRIER ABSORPTION IN SI SINGLE-CRYSTAL | 1-gen-1984 | Grimaldi, Maria Grazia; Baeri, P; Rimini, E. | file da validare |
ION-BEAM AND TEMPERATURE ANNEALING DURING HIGH-DOSE IMPLANTS | 1-gen-1985 | Cannavo, S; Grimaldi, Maria Grazia; Rimini, E; Ferla, G; Gandolfi, L. | file da validare |
EVIDENCE OF INTERFACIAL MELTING DURING PULSED LASER IRRADIATION OF NI2SI ON SI | 1-gen-1987 | Grimaldi, Maria Grazia; Priolo, Francesco; Baeri, P; Rimini, E; Cullis, Ag; Chew, Ng | file da validare |
Legenda icone
- file ad accesso aperto
- file disponibili sulla rete interna
- file disponibili agli utenti autorizzati
- file disponibili solo agli amministratori
- file sotto embargo
- nessun file disponibile