A galvanic-isolated coupling of circuit portions is accomplished on the basis of a stacked chip configuration. The semiconductor chips thus can be fabricated on the basis of any appropriate process technology, thereby incorporating one or more coupling elements, such as primary or secondary coils of a micro transformer, wherein the final characteristics of the micro transformer are adjusted during the wafer bond process.

Microstructure device comprising a face to face electromagnetic near field coupling between stacked device portions and method of forming the device

Ragonese E;PALMISANO, Giuseppe
2012-01-01

Abstract

A galvanic-isolated coupling of circuit portions is accomplished on the basis of a stacked chip configuration. The semiconductor chips thus can be fabricated on the basis of any appropriate process technology, thereby incorporating one or more coupling elements, such as primary or secondary coils of a micro transformer, wherein the final characteristics of the micro transformer are adjusted during the wafer bond process.
2012
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11769/115212
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