A galvanic-isolated coupling of circuit portions is accomplished on the basis of a stacked chip configuration. The semiconductor chips (200A,200B) thus can be fabricated on the basis of any appropriate process technology, thereby incorporating one or more coupling elements (220A,220B), such as primary or secondary coils of a micro transformer, wherein the final characteristics of the micro transformer are adjusted during the wafer bond process.
|Titolo:||A microstructure device comprising semiconductor devices stacked face to face and coupled by electromagnetic near field and method of forming the microstructure device|
|Data di pubblicazione:||2012|
|Appare nelle tipologie:||6.1 Brevetto|