In this paper we demonstrate a method based on ion-beam sputtering to extend the use of the micro four-point probe technique towards the determination of the carrier concentration profile in small (nm-scale) devices. We demonstrate the concept on laser-annealed B implanted Si fins and show that the carrier profile is independent of fin width. The measured profile is Gaussian shaped and suggests a 40% dopant activation compared to the B implant profile as calculated with Stopping and Range of Ions in Matter. © 2018 IEEE.
Towards Carrier Profiling in Nanometer-wide Si Fins with Micro Four-Point Probe
Spampinato, V.;
2018-01-01
Abstract
In this paper we demonstrate a method based on ion-beam sputtering to extend the use of the micro four-point probe technique towards the determination of the carrier concentration profile in small (nm-scale) devices. We demonstrate the concept on laser-annealed B implanted Si fins and show that the carrier profile is independent of fin width. The measured profile is Gaussian shaped and suggests a 40% dopant activation compared to the B implant profile as calculated with Stopping and Range of Ions in Matter. © 2018 IEEE.File in questo prodotto:
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