In this abstract, we report for the first time the low-current performance enhancement combined with the improvement of the scaling potential in CBRAM devices by adopting an etch-friendly alternative material, Co, as active electrode, based on theoretical considerations and experimental results. Co is proven to yield, with respect to Cu, faster/lower voltage switching and more stable conductive filaments, irrespective of the switching layer, thanks to its higher cohesive energy. By further optimizing the switching layer, we show that the introduction of Co as active electrode is a breakthrough for boosting CBRAM performances, enabling fast and low-power switching, long endurance lifetime and optimal data retention. © 2019 IEEE.

Co Active Electrode Enhances CBRAM Performance and Scaling Potential

Spampinato, V.;
2019-01-01

Abstract

In this abstract, we report for the first time the low-current performance enhancement combined with the improvement of the scaling potential in CBRAM devices by adopting an etch-friendly alternative material, Co, as active electrode, based on theoretical considerations and experimental results. Co is proven to yield, with respect to Cu, faster/lower voltage switching and more stable conductive filaments, irrespective of the switching layer, thanks to its higher cohesive energy. By further optimizing the switching layer, we show that the introduction of Co as active electrode is a breakthrough for boosting CBRAM performances, enabling fast and low-power switching, long endurance lifetime and optimal data retention. © 2019 IEEE.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11769/559926
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