Praseodymium oxide-based high k dielectric thin films grown by metal-organic chemical vapour deposition (MOCVD) at 750 °C on p-type Si (100) substrates have been proposed. It has been revealed by energy-filtered TEM analyses that depositions in 10-3 torr oxygen partial pressure produced a Pr2O3 and a PrnO2n-2·SiO2 bottom layer. The electrical properties of both Pr2O3/PrnO2n-2·SiO2 structures and PrnO2n-2·SiO2 thin layers have been investigated and compared.
Electrical properties of MOCVD praseodymium oxide based MOS structures
Lo Nigro R.;Toro R.;Malandrino G.;
2003-01-01
Abstract
Praseodymium oxide-based high k dielectric thin films grown by metal-organic chemical vapour deposition (MOCVD) at 750 °C on p-type Si (100) substrates have been proposed. It has been revealed by energy-filtered TEM analyses that depositions in 10-3 torr oxygen partial pressure produced a Pr2O3 and a PrnO2n-2·SiO2 bottom layer. The electrical properties of both Pr2O3/PrnO2n-2·SiO2 structures and PrnO2n-2·SiO2 thin layers have been investigated and compared.File in questo prodotto:
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