We present the characteristics of new monolithic silicon strip telescopes. By using suitable ion implantation techniques, the ΔE and residual energy stages of such telescopes have been integrated on the same silicon chip obtaining extremely thin ΔE stages of the order of 1 μ. This allows to obtain a very low charge identification energy threshold. The strip structure and the intrinsic characteristics of the detector enable us to build position sensitive detectors with good x-y resolution.
Strip monolithic telescopes
Amorini F.;Cardella G.;Fallica G.;Musumarra A.;Pappalardo G.;Rizzo F.;Valvo G.
2004-01-01
Abstract
We present the characteristics of new monolithic silicon strip telescopes. By using suitable ion implantation techniques, the ΔE and residual energy stages of such telescopes have been integrated on the same silicon chip obtaining extremely thin ΔE stages of the order of 1 μ. This allows to obtain a very low charge identification energy threshold. The strip structure and the intrinsic characteristics of the detector enable us to build position sensitive detectors with good x-y resolution.File in questo prodotto:
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