We present a review of recent developments in hydrodynamical modeling of charge transport in semiconductors. We focus our attention on the models for Si and GaAs based on the maximum entropy principle which, in the framework of extended thermodynamics, leads to the definition of closed systems of moment equations starting from the Boltzmann transport equation for semiconductors. Both the theoretical and application issues are examined.
|Titolo:||Recent development in Hydrodynamical modeling of semiconductors|
|Data di pubblicazione:||2003|
|Appare nelle tipologie:||2.1 Contributo in volume (Capitolo o Saggio)|