LITRICO, GRAZIA
 Distribuzione geografica
Continente #
NA - Nord America 277
EU - Europa 158
AS - Asia 54
AF - Africa 38
SA - Sud America 1
Totale 528
Nazione #
US - Stati Uniti d'America 270
IT - Italia 44
CN - Cina 39
IE - Irlanda 37
CI - Costa d'Avorio 28
UA - Ucraina 23
SE - Svezia 14
VN - Vietnam 11
RU - Federazione Russa 10
SN - Senegal 9
CA - Canada 7
DE - Germania 7
FR - Francia 7
FI - Finlandia 6
GR - Grecia 3
NL - Olanda 3
UZ - Uzbekistan 3
AT - Austria 1
CH - Svizzera 1
EG - Egitto 1
GB - Regno Unito 1
JP - Giappone 1
PL - Polonia 1
PY - Paraguay 1
Totale 528
Città #
Chandler 94
Dublin 37
Ashburn 35
Abidjan 28
Jacksonville 20
Nanjing 15
Andover 11
Cambridge 11
Lawrence 11
Dakar 9
Des Moines 9
Dong Ket 9
Scordia 7
Boardman 6
Catania 6
Helsinki 6
Toronto 6
Bremen 5
Jiaxing 5
Nanchang 4
Palermo 4
San Mateo 4
Torino 4
Wilmington 4
Dro 3
Ningbo 3
Cattolica 2
Civitavecchia 2
Falls Church 2
Guangzhou 2
Hanoi 2
Norwalk 2
Paris 2
San Francisco 2
Seattle 2
Amsterdam 1
Asunción 1
Bologna 1
Cairo 1
Dallas 1
Hangzhou 1
Hebei 1
Jinan 1
Kortenhoef 1
Ludwigshafen 1
Moscow 1
Ottawa 1
Providence 1
Redmond 1
Redwood City 1
Reston 1
Romford 1
San Antonio 1
Shenyang 1
Tappahannock 1
The Hague 1
Tianjin 1
Tokyo 1
Treviglio 1
Zhengzhou 1
Totale 399
Nome #
Silicon Carbide detectors for nuclear physics experiments at high beam luminosity 64
Measuring nuclear reaction cross sections to extract information on neutrinoless double beta decay 59
Sicilia—silicon carbide detectors for intense luminosity investigations and applications 59
The NUMEN project: NUclear Matrix Elements for Neutrinoless double beta decay 57
Point defects induced in ion irradiated 4H-SiC probed by exciton lines 51
The NUMEN project @ LNS: Status and perspectives 48
Silicon carbide for future intense luminosity nuclear physics investigations 46
Point defects reactions in ion irradiated SiC 44
Ion track effect on point defect production in SiC 43
NURE: An ERC project to study nuclear reactions for neutrinoless double beta decay 43
Double step annealing for the recovering of ion implantation defectiveness in 4H-SiC DIMOSFET 38
Totale 552
Categoria #
all - tutte 1.796
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 1.796


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/201910 0 0 0 0 0 0 0 0 0 0 1 9
2019/202046 18 6 3 1 3 0 3 1 4 1 5 1
2020/202168 3 3 8 1 14 4 4 0 4 8 6 13
2021/202290 5 13 0 4 18 1 13 2 4 0 3 27
2022/2023205 16 22 8 30 15 32 0 30 39 5 3 5
2023/2024104 9 15 3 4 5 32 2 17 7 10 0 0
Totale 552