Thermal annealing plays a crucial role for healing the defectiveness in the ion implanted regions of DIMOSFETs (Double Implanted MOSFETs) devices. In this work, we have studied the effect of a double step annealing on the body (Al implanted) and the source (P implanted) regions of such devices. We found that a high temperature annealing (1750°C, 1h) followed by a lower temperature one (1500°C, 4h) is mandatory to achieve low defects concentration and good crystal quality in both the n- and p- type zones of the device.
|Titolo:||Double step annealing for the recovering of ion implantation defectiveness in 4H-SiC DIMOSFET|
|Data di pubblicazione:||2018|
|Appare nelle tipologie:||1.1 Articolo in rivista|