Thermal annealing plays a crucial role for healing the defectiveness in the ion implanted regions of DIMOSFETs (Double Implanted MOSFETs) devices. In this work, we have studied the effect of a double step annealing on the body (Al implanted) and the source (P implanted) regions of such devices. We found that a high temperature annealing (1750°C, 1h) followed by a lower temperature one (1500°C, 4h) is mandatory to achieve low defects concentration and good crystal quality in both the n- and p- type zones of the device.

Double step annealing for the recovering of ion implantation defectiveness in 4H-SiC DIMOSFET

Zimbone, Massimo;Litrico, Grazia;Reitano, Riccardo;
2018-01-01

Abstract

Thermal annealing plays a crucial role for healing the defectiveness in the ion implanted regions of DIMOSFETs (Double Implanted MOSFETs) devices. In this work, we have studied the effect of a double step annealing on the body (Al implanted) and the source (P implanted) regions of such devices. We found that a high temperature annealing (1750°C, 1h) followed by a lower temperature one (1500°C, 4h) is mandatory to achieve low defects concentration and good crystal quality in both the n- and p- type zones of the device.
4H-SiC; Defects; Ion implantation; Photoluminescence; Materials Science (all); Condensed Matter Physics; Mechanics of Materials; Mechanical Engineering
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11769/357518
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