FOTI, Gaetano
FOTI, Gaetano
FISICA ED ASTRONOMIA "ETTORE MAJORANA"
AuSi compound formation induced by ion mixing
file da validare1984-01-01 Puglisi, Orazio Gaetano; Licciardello, Antonino; Calcagno, Lucia; Foti, Gaetano
Effects of Epitaxial Layer Growth Parameters on the Defect Density and on the Electrical Characteristics of Schottky Diodes
2005-01-01 LA VIA, F.; Roccaforte, F.; DI FRANCO, S.; Ruggiero, A.; Neri, L.; Reitano, Riccardo; Calcagno, Lucia; Foti, G.; Mauceri, M.; Leone, S.; Pistone, G.; Abbondanza, G.; Abbagnale, G.; Valente, G. L.; Crippa, D.
Ion track effect on point defect production in SiC
2011-01-01 Litrico, G; Zimbone, Massimo; Musumeci, Paolo; Calcagno, Lucia; Foti, G.
Low temperature reaction of point defects in ion irradiated 4H-SiC
file da validare2009-01-01 Litrico, G.; Izzo, G.; Calcagno, L.; LA VIA, F.; Foti, G.
Optimisation of epitaxial layers growth with HCl addition by optical and electrical characterization
file da validare2007-01-01 Calcagno, L; Izzo, G; Litrico, G; Foti, G; LA VIA, F; Galvagno, G; Mauceri, M; Leone, S
Point defects induced in ion irradiated 4H-SiC probed by exciton lines
2009-01-01 Litrico, G.; Zimbone, M.; Calcagno, L; Musumeci, P.; Baratta, G. A.; Foti, G.
Secondary Electron Emission from Various Material Bombarded with Protons at E=2.5 MeV
file da validare1974-01-01 Foti, G.; Potenza, R.; Triglia, A.
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| AuSi compound formation induced by ion mixing | 1-gen-1984 | Puglisi, Orazio Gaetano; Licciardello, Antonino; Calcagno, Lucia; Foti, Gaetano | file da validare |
| Effects of Epitaxial Layer Growth Parameters on the Defect Density and on the Electrical Characteristics of Schottky Diodes | 1-gen-2005 | LA VIA, F.; Roccaforte, F.; DI FRANCO, S.; Ruggiero, A.; Neri, L.; Reitano, Riccardo; Calcagno, Lucia; Foti, G.; Mauceri, M.; Leone, S.; Pistone, G.; Abbondanza, G.; Abbagnale, G.; Valente, G. L.; Crippa, D. | |
| Ion track effect on point defect production in SiC | 1-gen-2011 | Litrico, G; Zimbone, Massimo; Musumeci, Paolo; Calcagno, Lucia; Foti, G. | |
| Low temperature reaction of point defects in ion irradiated 4H-SiC | 1-gen-2009 | Litrico, G.; Izzo, G.; Calcagno, L.; LA VIA, F.; Foti, G. | file da validare |
| Optimisation of epitaxial layers growth with HCl addition by optical and electrical characterization | 1-gen-2007 | Calcagno, L; Izzo, G; Litrico, G; Foti, G; LA VIA, F; Galvagno, G; Mauceri, M; Leone, S | file da validare |
| Point defects induced in ion irradiated 4H-SiC probed by exciton lines | 1-gen-2009 | Litrico, G.; Zimbone, M.; Calcagno, L; Musumeci, P.; Baratta, G. A.; Foti, G. | |
| Secondary Electron Emission from Various Material Bombarded with Protons at E=2.5 MeV | 1-gen-1974 | Foti, G.; Potenza, R.; Triglia, A. | file da validare |