Ion bombardment with energetic ions of a thin layer of Au deposited on a silicon substrate gives rise to efficient intermixing. This AuSi intermixed layer has been analyzed with Rutherford back-scattering spectrometry and X-ray photoelectron spectroscopy. The results of these investigations show that AuSi compound formation occurs and that this can provide the driving force for the observed intermixing. © 1984.
AuSi compound formation induced by ion mixing
PUGLISI, Orazio Gaetano;LICCIARDELLO, Antonino;CALCAGNO, Lucia;FOTI, Gaetano
1984-01-01
Abstract
Ion bombardment with energetic ions of a thin layer of Au deposited on a silicon substrate gives rise to efficient intermixing. This AuSi intermixed layer has been analyzed with Rutherford back-scattering spectrometry and X-ray photoelectron spectroscopy. The results of these investigations show that AuSi compound formation occurs and that this can provide the driving force for the observed intermixing. © 1984.File in questo prodotto:
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