Ion bombardment with energetic ions of a thin layer of Au deposited on a silicon substrate gives rise to efficient intermixing. This AuSi intermixed layer has been analyzed with Rutherford back-scattering spectrometry and X-ray photoelectron spectroscopy. The results of these investigations show that AuSi compound formation occurs and that this can provide the driving force for the observed intermixing. © 1984.
|Titolo:||AuSi compound formation induced by ion mixing|
|Data di pubblicazione:||1984|
|Appare nelle tipologie:||1.1 Articolo in rivista|