Ion bombardment with energetic ions of a thin layer of Au deposited on a silicon substrate gives rise to efficient intermixing. This AuSi intermixed layer has been analyzed with Rutherford back-scattering spectrometry and X-ray photoelectron spectroscopy. The results of these investigations show that AuSi compound formation occurs and that this can provide the driving force for the observed intermixing. © 1984.

AuSi compound formation induced by ion mixing

PUGLISI, Orazio Gaetano;LICCIARDELLO, Antonino;CALCAGNO, Lucia;FOTI, Gaetano
1984-01-01

Abstract

Ion bombardment with energetic ions of a thin layer of Au deposited on a silicon substrate gives rise to efficient intermixing. This AuSi intermixed layer has been analyzed with Rutherford back-scattering spectrometry and X-ray photoelectron spectroscopy. The results of these investigations show that AuSi compound formation occurs and that this can provide the driving force for the observed intermixing. © 1984.
1984
Physical and Theoretical Chemistry; Spectroscopy; Condensed Matter Physics; Atomic and Molecular Physics, and Optics; Surfaces and Interfaces
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11769/298261
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