| Nome |
# |
|
Improved synthesis of ZnO nanowalls: Effects of chemical bath deposition time and annealing temperature, file dfe4d22b-8524-bb0a-e053-d805fe0a78d9
|
50
|
|
Fluorine segregation and incorporation during solid phase epitaxy of Si, file dfe4d226-f803-bb0a-e053-d805fe0a78d9
|
27
|
|
Investigation of WO3 electrodeposition leading to nanostructured thin films, file dfe4d22d-26a3-bb0a-e053-d805fe0a78d9
|
23
|
|
Hybrid nickel-free graphene/porphyrin rings for photodegradation of emerging pollutants in water, file dfe4d229-dd2f-bb0a-e053-d805fe0a78d9
|
19
|
|
Freestanding photocatalytic materials based on 3D graphene and polyporphyrins, file dfe4d228-e896-bb0a-e053-d805fe0a78d9
|
16
|
|
Cyclic fatigue resistance, torsional resistance, and metallurgical characteristics of M3 Rotary and M3 Pro Gold NiTi files, file dfe4d229-8513-bb0a-e053-d805fe0a78d9
|
16
|
|
H2 detection mechanism in chemoresistive sensor based on low-cost synthesized WO3 nanorods, file dfe4d22e-9515-bb0a-e053-d805fe0a78d9
|
16
|
|
Freestanding photocatalytic materials based on 3D graphene and polyporphyrins, file dfe4d228-e4ab-bb0a-e053-d805fe0a78d9
|
15
|
|
Comparison of the Sensing Properties of ZnO Nanowalls-Based Sensors toward Low Concentrations of CO and NO2, file dfe4d227-dcfd-bb0a-e053-d805fe0a78d9
|
12
|
|
Impact of nanoparticles on the environmental sustainability of polymer nanocomposites based on bioplastics or recycled plastics – A review of life-cycle assessment studies, file dfe4d22e-e28c-bb0a-e053-d805fe0a78d9
|
11
|
|
Low-Cost, High-Yield ZnO Nanostars Synthesis for Pseudocapacitor Applications, file 54623b82-c6b9-4f4e-b761-501d4e2b9456
|
7
|
|
Engineering Hexagonal/Monoclinic WO3 Phase Junctions for Improved Electrochemical Hydrogen Evolution Reaction, file 2b946b94-acd7-46e3-93d1-e75418fac0be
|
6
|
|
Advances in WO3-Based Supercapacitors: State-of-the-Art Research and Future Perspectives, file 824fec6d-b477-458b-a9cb-1404e5e880d5
|
5
|
|
Experimental evidences for two paths in the dissolution process of B clusters in crystalline Si, file dfe4d227-d6df-bb0a-e053-d805fe0a78d9
|
5
|
|
Photo- and Water-Degradation Phenomena of ZnO Bio-Blend Based on Poly(lactic acid) and Polyamide 11, file 8e8a86c3-09d5-468c-84dd-38b1680b3982
|
4
|
|
Engineering of Nanostructured WO3 Powders for Asymmetric Supercapacitors, file 9bed0313-42ee-4e6d-8431-da894d4e561a
|
4
|
|
B activation and clustering in ion-implanted Ge, file dfe4d227-dddd-bb0a-e053-d805fe0a78d9
|
4
|
|
Enhanced sensitivity in non-enzymatic glucose detection by improved growth kinetics of Ni-based nanostructures, file dfe4d22c-86d7-bb0a-e053-d805fe0a78d9
|
4
|
|
Ultrasensitive Electrochemical Impedance Detection of Mycoplasma agalactiae DNA by Low-Cost and Disposable Au-Decorated NiO Nanowall Electrodes, file dfe4d22d-d5d3-bb0a-e053-d805fe0a78d9
|
4
|
|
WO3 Nanorods Decorated with Very Small Amount of Pt for Effective Hydrogen Evolution Reaction, file 3982c075-a5fb-4b29-8346-e17f79401aaf
|
3
|
|
Mechanisms of boron diffusion in silicon and germanium, file dfe4d226-ffa5-bb0a-e053-d805fe0a78d9
|
3
|
|
Extended Point Defects in Crystalline Materials: Ge and Si, file dfe4d227-80f6-bb0a-e053-d805fe0a78d9
|
3
|
|
Role of point defects on B diffusion in Ge, file dfe4d227-9d38-bb0a-e053-d805fe0a78d9
|
3
|
|
He implantation in Si for B diffusion control, file dfe4d227-d318-bb0a-e053-d805fe0a78d9
|
3
|
|
Effect of He induced nanovoids on B implanted in Si: the microscopic mechanism, file dfe4d227-d7ac-bb0a-e053-d805fe0a78d9
|
3
|
|
Radiation enhanced diffusion of B in crystalline Ge, file dfe4d227-d7d4-bb0a-e053-d805fe0a78d9
|
3
|
|
Crystallization of nano amorphized regions in thin epitaxial layer of Ge2Sb2Te5, file dfe4d22d-ecc2-bb0a-e053-d805fe0a78d9
|
3
|
|
Engineering Hexagonal/Monoclinic WO3 Phase Junctions for Improved Electrochemical Hydrogen Evolution Reaction, file 6d75cac6-1085-4e35-baca-3b920395934b
|
2
|
|
High-level incorporation of antimony in germanium by laser annealing, file dfe4d226-fcc2-bb0a-e053-d805fe0a78d9
|
2
|
|
Role of C in the formation and kinetics of nanovoids induced by He+ implantation in Si, file dfe4d227-d30a-bb0a-e053-d805fe0a78d9
|
2
|
|
Transient enhanced diffusion of B mediated by self-interstitials in preamorphized Ge, file dfe4d227-d31c-bb0a-e053-d805fe0a78d9
|
2
|
|
B electrical activation in crystalline and preamorphized Ge, file dfe4d227-d350-bb0a-e053-d805fe0a78d9
|
2
|
|
Self-interstitials injection in crystalline Ge induced by GeO2 nanoclusters, file dfe4d227-d3cc-bb0a-e053-d805fe0a78d9
|
2
|
|
Fluorine incorporation in preamorphized silicon, file dfe4d227-d45b-bb0a-e053-d805fe0a78d9
|
2
|
|
Defects in Ge caused by sub-amorphizing self-implantation: Formation and dissolution, file dfe4d227-d4a3-bb0a-e053-d805fe0a78d9
|
2
|
|
Role of surface nanovoids on interstitial trapping in He implanted crystalline Si, file dfe4d227-d4d2-bb0a-e053-d805fe0a78d9
|
2
|
|
Challenges and opportunities for doping control in Ge for micro and optoelectronics applications, file dfe4d227-d57f-bb0a-e053-d805fe0a78d9
|
2
|
|
Anomalous transport of Sb in laser irradiated Ge, file dfe4d227-d669-bb0a-e053-d805fe0a78d9
|
2
|
|
Role of self-interstitials on B diffusion in Ge, file dfe4d227-d6dd-bb0a-e053-d805fe0a78d9
|
2
|
|
High-resolution X-ray diffraction by end of range defects in self-amorphized Ge, file dfe4d227-d760-bb0a-e053-d805fe0a78d9
|
2
|
|
Activation and carrier mobility in high fluence B implanted germanium, file dfe4d227-d762-bb0a-e053-d805fe0a78d9
|
2
|
|
Atomistic analysis of B clustering and mobility degradation in highly B-doped junctions, file dfe4d227-d764-bb0a-e053-d805fe0a78d9
|
2
|
|
Comment on “Diffusion of n-type dopants in germanium” [Appl. Phys. Rev. 1, 011301 (2014)], file dfe4d227-d7a5-bb0a-e053-d805fe0a78d9
|
2
|
|
Role of ion mass on damage accumulation during ion implantation in Ge, file dfe4d227-d7aa-bb0a-e053-d805fe0a78d9
|
2
|
|
Mechanism of B diffusion in crystalline Ge under proton irradiation, file dfe4d227-d7d6-bb0a-e053-d805fe0a78d9
|
2
|
|
He implantation to control B diffusion in crystalline and preamorphized Si, file dfe4d227-d956-bb0a-e053-d805fe0a78d9
|
2
|
|
Effect of self-interstitials – nanovoids interaction on two-dimensional diffusion and activation of limplanted B in Si, file dfe4d227-da39-bb0a-e053-d805fe0a78d9
|
2
|
|
B clustering in amorphous Si, file dfe4d227-da5a-bb0a-e053-d805fe0a78d9
|
2
|
|
He induced nanovoids for point-defect engineering in B-implanted crystalline Si, file dfe4d227-da5c-bb0a-e053-d805fe0a78d9
|
2
|
|
He implantation induced nanovoids in crystalline Si, file dfe4d227-dacd-bb0a-e053-d805fe0a78d9
|
2
|
|
Localization of He induced nanovoids in buried Si1-xGex thin films, file dfe4d227-dadb-bb0a-e053-d805fe0a78d9
|
2
|
|
Evolution of boron-interstitial clusters in crystalline Si studied by transmission electron microscopy, file dfe4d227-db07-bb0a-e053-d805fe0a78d9
|
2
|
|
Boron-interstitial clusters in cristalline silicon: stoichiometry and strain, file dfe4d227-dc09-bb0a-e053-d805fe0a78d9
|
2
|
|
Effects of hydrogen implantation temperature on InP surface blistering, file dfe4d227-dd66-bb0a-e053-d805fe0a78d9
|
2
|
|
Lattice strain induced by boron clusters in crystalline silicon, file dfe4d227-de2e-bb0a-e053-d805fe0a78d9
|
2
|
|
Size effects on the electrical activation of low-energy implanted B in Si, file dfe4d227-de30-bb0a-e053-d805fe0a78d9
|
2
|
|
Experimental investigations of boron diffusion mechanism in crystalline and amorphous silicon, file dfe4d227-de5b-bb0a-e053-d805fe0a78d9
|
2
|
|
Kinetics of large B clusters in crystalline and preamorphized silicon, file dfe4d227-e00c-bb0a-e053-d805fe0a78d9
|
2
|
|
Boron diffusion in extrinsically doped crystalline silicon, file dfe4d227-e045-bb0a-e053-d805fe0a78d9
|
2
|
|
Changing the flux flow state in weak pinning superconducting films, file dfe4d228-31bf-bb0a-e053-d805fe0a78d9
|
2
|
|
Self-Organization Based Fabrication of Bimetallic PtPd Nanoparticles on Transparent Conductive Oxide Substrates, file dfe4d228-a43f-bb0a-e053-d805fe0a78d9
|
2
|
|
The role of solvent on the formulation of graphene/polyporphyrin hybrid material versus photocatalytic activity, file dfe4d229-d833-bb0a-e053-d805fe0a78d9
|
2
|
|
In situ thermal evolution of B-B pairs in crystalline Si: a spectroscopic high resolution x-ray diffraction study, file dfe4d22a-5c93-bb0a-e053-d805fe0a78d9
|
2
|
|
Microscopic model for pH sensing mechanism in zinc-based nanowalls, file dfe4d22b-a98e-bb0a-e053-d805fe0a78d9
|
2
|
|
Mechanism of Fast NO Response in a WO3-Nanorod-Based Gas Sensor, file e2d00d08-13fe-4afe-aa85-a17d2cd3a12e
|
2
|
|
Pain-Free Alpha-Synuclein Detection by Low-Cost Hierarchical Nanowire Based Electrode, file 2799f12b-223a-4b4c-8584-26b0d25db6a4
|
1
|
|
Isolation of bidimensional electron gas in AlGaN/GaN heterojunction using Ar ion implantation, file 72b68966-deac-44b4-a083-23176114a2ae
|
1
|
|
Dissolution kinetics of boron-interstitial clusters in silicon, file dfe4d227-d30b-bb0a-e053-d805fe0a78d9
|
1
|
|
Submicron confinement effect on electrical activation of B implanted in Si, file dfe4d227-d7a7-bb0a-e053-d805fe0a78d9
|
1
|
|
Scanning capacitance microscopy two-dimensional carrier profiling for ultra-shallow junction characterization in deep submicron technology, file dfe4d227-d7a9-bb0a-e053-d805fe0a78d9
|
1
|
|
Dissolution kinetics of B clusters in crystalline Si, file dfe4d227-d84e-bb0a-e053-d805fe0a78d9
|
1
|
|
B Activation Enhancement in Submicron Confined Implants in Si, file dfe4d227-da5d-bb0a-e053-d805fe0a78d9
|
1
|
|
Lattice strain and composition of Boron-Interstitial Clusters in Crystalline Silicon, file dfe4d227-e01c-bb0a-e053-d805fe0a78d9
|
1
|
| Totale |
356 |