BRUNO, ELENA
 Distribuzione geografica
Continente #
NA - Nord America 834
EU - Europa 533
AS - Asia 243
SA - Sud America 1
Totale 1611
Nazione #
US - Stati Uniti d'America 758
CN - Cina 219
UA - Ucraina 200
IT - Italia 165
CA - Canada 76
RU - Federazione Russa 63
SE - Svezia 49
VN - Vietnam 14
FR - Francia 11
GB - Regno Unito 7
AT - Austria 6
CH - Svizzera 6
DE - Germania 4
FI - Finlandia 4
NL - Olanda 4
PL - Polonia 3
TR - Turchia 3
BG - Bulgaria 2
GR - Grecia 2
IE - Irlanda 2
LB - Libano 2
RO - Romania 2
UZ - Uzbekistan 2
BE - Belgio 1
BR - Brasile 1
CZ - Repubblica Ceca 1
EE - Estonia 1
IN - India 1
MY - Malesia 1
TW - Taiwan 1
Totale 1611
Città #
Jacksonville 269
Chandler 109
Nanjing 87
Cambridge 73
Lawrence 73
Andover 72
Catania 68
Toronto 63
Des Moines 45
Wilmington 34
Nanchang 30
Shenyang 25
San Mateo 22
Hebei 20
Saint Petersburg 14
Ottawa 13
Dong Ket 12
Tianjin 9
Changsha 8
Siracusa 8
Ashburn 7
Moscow 7
Aci Sant'Antonio 6
Hangzhou 6
Houston 6
Jiaxing 6
Jinan 6
Gela 5
Falls Church 4
Helsinki 4
Norwalk 4
Zhengzhou 4
Aci Catena 3
Den Haag 3
Kocaeli 3
San Leandro 3
Beijing 2
Guangzhou 2
Hanoi 2
Hanover 2
Kunming 2
Kyiv 2
Lanzhou 2
Lausanne 2
Liberty Lake 2
Messina 2
Redwood City 2
Amsterdam 1
Ann Arbor 1
Changchun 1
Coimbatore 1
Duncan 1
Fairfield 1
Gagliano 1
Giarre 1
Gravina di Catania 1
Haikou 1
Kiev 1
Kuala Lumpur 1
London 1
Mountain View 1
Ningbo 1
Palermo 1
Paterno 1
Pavia 1
Providence 1
Redmond 1
Rome 1
San Francisco 1
Taipei 1
Tallinn 1
Trento 1
Totale 1178
Nome #
B Activation Enhancement in Submicron Confined Implants in Si 44
In situ thermal evolution of B-B pairs in crystalline Si: a spectroscopic high resolution x-ray diffraction study 43
B activation and clustering in ion-implanted Ge 37
Fluorescent nanoparticles for reliable communication among implantable medical devices 37
Mechanism of Boron Diffusion in Amorphous Silicon 35
Lattice strain induced by boron clusters in crystalline silicon 34
Experimental evidences for two paths in the dissolution process of B clusters in crystalline Si 33
B clustering in amorphous Si 32
Dissolution kinetics of boron-interstitial clusters in silicon 32
Submicron confinement effect on electrical activation of B implanted in Si 32
Changing the flux flow state in weak pinning superconducting films 31
Challenges and opportunities for doping control in Ge for micro and optoelectronics applications 31
Comparison of the Sensing Properties of ZnO Nanowalls-Based Sensors toward Low Concentrations of CO and NO2 31
Freestanding photocatalytic materials based on 3D graphene and polyporphyrins 31
Cyclic fatigue resistance, torsional resistance, and metallurgical characteristics of M3 Rotary and M3 Pro Gold NiTi files 31
Vacancy engineering by He induced nanovoids in crystalline Si 30
Evolution of boron-interstitial clusters in crystalline Si studied by transmission electron microscopy 29
Scanning capacitance microscopy two-dimensional carrier profiling for ultra-shallow junction characterization in deep submicron technology 29
Carrier mobility degradation in highly B-doped junctions 29
Ultrasensitive Electrochemical Impedance Detection of Mycoplasma agalactiae DNA by Low-Cost and Disposable Au-Decorated NiO Nanowall Electrodes 29
Evolution of boron-interstitial clusters in preamorphized silicon without the contribution of end-of-range defects 28
Role of surface nanovoids on interstitial trapping in He implanted crystalline Si 28
Effect of O Implantation in Crystalline Ge 28
Extended Point Defects in Crystalline Materials: Ge and Si 28
High-level incorporation of antimony in germanium by laser annealing 27
Role of point defects on B diffusion in Ge 27
High-resolution X-ray diffraction by end of range defects in self-amorphized Ge 27
Atomistic analysis of B clustering and mobility degradation in highly B-doped junctions 27
Defects in Ge caused by sub-amorphizing self-implantation: Formation and dissolution 26
Dissolution kinetics of B clusters in crystalline Si 26
Challenges and opportunities for doping control in Ge for micro and optoelectronics applications 26
Anomalous transport of Sb in laser irradiated Ge 26
Role of C in the formation and kinetics of nanovoids induced by He+ implantation in Si 26
Enhanced sensitivity in non-enzymatic glucose detection by improved growth kinetics of Ni-based nanostructures 26
Boron diffusion in extrinsically doped crystalline silicon 25
Activation and carrier mobility in high fluence B implanted germanium 24
He implantation to control B diffusion in crystalline and preamorphized Si 23
B electrical activation in crystalline and preamorphized Ge 23
Self-Organization Based Fabrication of Bimetallic PtPd Nanoparticles on Transparent Conductive Oxide Substrates 23
Boron-interstitial clusters in cristalline silicon: stoichiometry and strain 23
Enhanced light scattering in Si nanostructures produced by pulsed laser irradiation 23
Microscopic model for pH sensing mechanism in zinc-based nanowalls 23
Radiation enhanced diffusion of B in crystalline Ge 22
Mechanisms of boron diffusion in silicon and germanium 22
Indirect Diffusion Mechanism of Boron Atoms in Crystalline and Amorphous Silicon 22
The role of solvent on the formulation of graphene/polyporphyrin hybrid material versus photocatalytic activity 22
Role of ion mass on damage accumulation during ion implantation in Ge 21
Comment on “Diffusion of n-type dopants in germanium” [Appl. Phys. Rev. 1, 011301 (2014)] 20
Transient enhanced diffusion of B mediated by self-interstitials in preamorphized Ge 20
Lattice strain and composition of Boron-Interstitial Clusters in Crystalline Silicon 20
Improved synthesis of ZnO nanowalls: Effects of chemical bath deposition time and annealing temperature 20
Kinetics of large B clusters in crystalline and preamorphized silicon 19
Self-interstitials injection in crystalline Ge induced by GeO2 nanoclusters 19
Effect of self-interstitials – nanovoids interaction on two-dimensional diffusion and activation of limplanted B in Si 18
Role of self-interstitials on B diffusion in Ge 18
Mechanism of B diffusion in crystalline Ge under proton irradiation 18
He implantation induced nanovoids in crystalline Si 18
Diffusion and clustering of B in Si: basics and defect engineering 18
Fluorine incorporation in preamorphized silicon 17
Size effects on the electrical activation of low-energy implanted B in Si 17
Recent Insights in the Diffusion of Boron in Silicon and Germanium 17
He implantation in Si for B diffusion control 17
He induced nanovoids for point-defect engineering in B-implanted crystalline Si 17
Localization of He induced nanovoids in buried Si1-xGex thin films 17
Hybrid nickel-free graphene/porphyrin rings for photodegradation of emerging pollutants in water 17
Fluorine segregation and incorporation during solid phase epitaxy of Si 16
Effects of hydrogen implantation temperature on InP surface blistering 16
Effect of He induced nanovoids on B implanted in Si: the microscopic mechanism 16
Experimental investigations of boron diffusion mechanism in crystalline and amorphous silicon 16
Investigation of WO3 electrodeposition leading to nanostructured thin films 14
Crystallization of nano amorphized regions in thin epitaxial layer of Ge2Sb2Te5 10
H2 detection mechanism in chemoresistive sensor based on low-cost synthesized WO3 nanorods 8
Low-Cost, High-Yield ZnO Nanostars Synthesis for Pseudocapacitor Applications 7
Engineering Hexagonal/Monoclinic WO3 Phase Junctions for Improved Electrochemical Hydrogen Evolution Reaction 7
Impact of nanoparticles on the environmental sustainability of polymer nanocomposites based on bioplastics or recycled plastics – A review of life-cycle assessment studies 6
Totale 1775
Categoria #
all - tutte 2753
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 2753


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2017/201817 0001 30 012 1000
2018/2019133 0000 3158 112 60025
2019/2020350 14620258 261 520 2552715
2020/2021377 326614 9510 580 2456229
2021/2022577 6874013 1006 9624 331519129
2022/2023201 89652819 00 00 0000
Totale 1775