Excimer laser annealing is shown to be very promising to promote Sb incorporation in Ge upto concentrations as high as 11021 at./cm3. However, we demonstrate that when Ge is melted bylaser irradiation, a high excess of vacancies is generated in the molten region. These vacanciesinduce Sb electrical deactivation at the melt depth through the formation of Sbm-Vn complexes thatact as a sink for further Sb atoms, even leading Sb to back-diffuse towards the surface, against theconcentration gradient. These results are fundamental for the realization of new generationGe-based micro and optoelectronic devices.
|Titolo:||Anomalous transport of Sb in laser irradiated Ge|
|Data di pubblicazione:||2012|
|Citazione:||Anomalous transport of Sb in laser irradiated Ge / E. Bruno; G. Scapellato; A La Magna; M. Cuscuna; E. Napolitani; S. Boninelli; Priolo F; G. Fortunato; V. Privitera. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 101:17(2012).|
|Appare nelle tipologie:||1.1 Articolo in rivista|