High doping regimes of B implanted Ge have been accurately characterized combining Hall effect technique and nuclear reaction analysis. Preamorphized Ge was implanted with B at 35 keV (spanning the 0.25-25x10(20) B/cm(3) concentration range) and recrystallized by solid phase epitaxy at 360 degrees C. The Hall scattering factor and the maximum concentration of active B resulted r(H)=1.21 and similar to 5.7x10(20) B/cm(3), respectively. The room-temperature carrier mobility was accurately measured, decreasing from similar to 300 to 50 cm(2)/V s in the investigated dopant density, and a fitting empirical law is given. These results allow reliable evaluation for Ge application in future microelectronic devices. (c) 2008 American Institute of Physics.

Activation and carrier mobility in high fluence B implanted germanium

MIRABELLA, SALVATORE;BRUNO, ELENA;GRIMALDI, Maria Grazia
2008

Abstract

High doping regimes of B implanted Ge have been accurately characterized combining Hall effect technique and nuclear reaction analysis. Preamorphized Ge was implanted with B at 35 keV (spanning the 0.25-25x10(20) B/cm(3) concentration range) and recrystallized by solid phase epitaxy at 360 degrees C. The Hall scattering factor and the maximum concentration of active B resulted r(H)=1.21 and similar to 5.7x10(20) B/cm(3), respectively. The room-temperature carrier mobility was accurately measured, decreasing from similar to 300 to 50 cm(2)/V s in the investigated dopant density, and a fitting empirical law is given. These results allow reliable evaluation for Ge application in future microelectronic devices. (c) 2008 American Institute of Physics.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/20.500.11769/656
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