B diffusion in crystalline Ge is investigated by proton irradiation in thin layers with B delta doping under different fluences (1 X 10(15)-10 X 10(15) H+/cm(2)), fluxes (6 X 10(11)-35 X 10(11) H+/cm(2) s), and temperatures of the implanted target (from - 196 to 550 degrees C), both during and after irradiation. B migration is enhanced by several orders of magnitude with respect to equilibrium. Moreover, B diffusion is shown to occur through a point-defect-mediated mechanism, compatible with a kick-out process. The diffusion mechanism is discussed. These results are a key point for a full comprehension of the B diffusion in Ge. RI Mirabella, Salvo/E-4672-2010
Mechanism of B diffusion in crystalline Ge under proton irradiation
BRUNO, ELENA;MIRABELLA, SALVATORE;TERRASI, Antonio;PRIOLO, Francesco;
2009-01-01
Abstract
B diffusion in crystalline Ge is investigated by proton irradiation in thin layers with B delta doping under different fluences (1 X 10(15)-10 X 10(15) H+/cm(2)), fluxes (6 X 10(11)-35 X 10(11) H+/cm(2) s), and temperatures of the implanted target (from - 196 to 550 degrees C), both during and after irradiation. B migration is enhanced by several orders of magnitude with respect to equilibrium. Moreover, B diffusion is shown to occur through a point-defect-mediated mechanism, compatible with a kick-out process. The diffusion mechanism is discussed. These results are a key point for a full comprehension of the B diffusion in Ge. RI Mirabella, Salvo/E-4672-2010| File | Dimensione | Formato | |
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