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EnglishIn this work we propose an alternative methodology to study B diffusion in crystalline Ge We enhance B diffusion by means of implants in such a way to increase the point-defects distribution through the sample, well above the equilibrium value A comparison between B diffusion Occurring tinder implantation with different ions or after post-implantation annealing allowed to discern any possible role of ionization effects on B diffusion Indeed, B diffusion is demonstrated to Occur through a point-defect-mediated mechanism. The diffusion mechanism is hence discussed These results are a key point for a full comprehension of the B diffusion in Ge. (C) 2009 Elsevier B.V. All rights reserved. RI Mirabella, Salvo/E-4672-2010
| Titolo: | Radiation enhanced diffusion of B in crystalline Ge |
| Autori interni: | |
| Data di pubblicazione: | 2010 |
| Rivista: | |
| Handle: | http://hdl.handle.net/20.500.11769/6446 |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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