A high-performance sense amplifier for nonvolatile memories capable of working under a very low-voltage power supply is presented. The topology of the sense amplifier uses a pure current-mode comparison. allowing power supplies lower than 1 V to be used and includes two subcircuits which improve slew rate performance. The sense amplifier was implemented in an EEPROM realized with a 0.18-mum EEPROM technology. Experimental results showed a read access time of about 30 ns with a power supply of 1.65 V.
|Titolo:||A high-performance very low-voltage current sense amplifier for nonvolatile memories|
|Data di pubblicazione:||2005|
|Appare nelle tipologie:||1.1 Articolo in rivista|