A high-performance sense amplifier for nonvolatile memories capable of working under a very low-voltage power supply is presented. The topology of the sense amplifier uses a pure current-mode comparison. allowing power supplies lower than 1 V to be used and includes two subcircuits which improve slew rate performance. The sense amplifier was implemented in an EEPROM realized with a 0.18-mum EEPROM technology. Experimental results showed a read access time of about 30 ns with a power supply of 1.65 V.
A high-performance very low-voltage current sense amplifier for nonvolatile memories
PALUMBO, Gaetano;
2005-01-01
Abstract
A high-performance sense amplifier for nonvolatile memories capable of working under a very low-voltage power supply is presented. The topology of the sense amplifier uses a pure current-mode comparison. allowing power supplies lower than 1 V to be used and includes two subcircuits which improve slew rate performance. The sense amplifier was implemented in an EEPROM realized with a 0.18-mum EEPROM technology. Experimental results showed a read access time of about 30 ns with a power supply of 1.65 V.File in questo prodotto:
| File | Dimensione | Formato | |
|---|---|---|---|
|
R91-A High Performance Very Low-Voltage Current Sense Amplifire for Non Volatile Memories.pdf
solo gestori archivio
Tipologia:
Versione Editoriale (PDF)
Licenza:
Non specificato
Dimensione
1.08 MB
Formato
Adobe PDF
|
1.08 MB | Adobe PDF | Visualizza/Apri |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
