The diffusion and the electrical behavior of Al implanted in the dose range of 1 X 10(13) to 5 X 10(15) cm-2 at 300 keV in capped and uncapped Si is investigated. The Al-based precipitates which are formed when Al concentration exceeds its solid solubility in Si are electrically inactive. The out-diffusion phenomenon that is always present in uncapped samples reduces the Al dose diffused into Si substrate. A study on the electrical activity of Al implanted in Si through SiO2, Si3N4, and Si3N4/SiO2 capping films also is presented. In these capped samples Al segregation in SiO2 layer occurs. The electrically active doses are small and comparable to that of uncapped samples. We studied the diffusivity of Al in bulk SiO2 and Si3N4 at 1200-degrees-C. The fast Al diffusion through SiO2 thin layers is driven by a chemical reaction between Al and SiO2 starting from the SiO2/Si interface.

DIFFUSION AND ELECTRICAL BEHAVIOR OF AL IMPLANTED INTO CAPPED SI RID C-5307-2009

SCANDURRA A;TORRISI, Alberto
1993

Abstract

The diffusion and the electrical behavior of Al implanted in the dose range of 1 X 10(13) to 5 X 10(15) cm-2 at 300 keV in capped and uncapped Si is investigated. The Al-based precipitates which are formed when Al concentration exceeds its solid solubility in Si are electrically inactive. The out-diffusion phenomenon that is always present in uncapped samples reduces the Al dose diffused into Si substrate. A study on the electrical activity of Al implanted in Si through SiO2, Si3N4, and Si3N4/SiO2 capping films also is presented. In these capped samples Al segregation in SiO2 layer occurs. The electrically active doses are small and comparable to that of uncapped samples. We studied the diffusivity of Al in bulk SiO2 and Si3N4 at 1200-degrees-C. The fast Al diffusion through SiO2 thin layers is driven by a chemical reaction between Al and SiO2 starting from the SiO2/Si interface.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/20.500.11769/10127
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