Al(x)Ga1-xAs/GaAs heterostructures (0.15 less-than-or-equal-to x less-than-or-equal-to 0.4) have been studied using Secondary Ion Mass Spectrometry (SIMS) and Sputtered Neutral Mass Spectrometry (SNMS) techniques. A thin MQW structure was also investigated. Both techniques give a good quantification of the constituent elements in these systems, provided that standard samples are available. It is shown that SNMS provides a tool for quantitative evaluation of the matrix effect in SIMS measurements. In addition, a standardless method for the determination of the Ga content in Al(x)Ga1-xAs/GaAs heterostructures by means of SNMS is proposed.
|Titolo:||Evaluation of matrix effects in SIMS quantification of AlxGa1-xAs/GaAs heterostructures - a SNMS approach|
|Autori interni:||LICCIARDELLO, Antonino|
|Data di pubblicazione:||1994|
|Rivista:||APPLIED SURFACE SCIENCE|
|Appare nelle tipologie:||1.1 Articolo in rivista|