In this brief, a new low-voltage low-power CMOS voltage reference independent of temperature is presented. It is based on subthreshold, MOSFETs and on compensating a PTAT-based variable with the gate-source voltage of a subthreshold MOSFET. The circuit, designed with a standard 1.2-mum CMOS technology, exhibits an average voltage of about 295 mV with an average temperature coefficient of 119 ppm/degreesC in the range [-25, +125] degreesC. A brief study of gate-source voltage behavior with respect to temperature in subthreshold. MOSFETs is also reported.

A Low-Voltage Low-Power Voltage Reference Based on Subthreshold MOSFETs

GIUSTOLISI, Gianluca;PALUMBO, Gaetano;
2003-01-01

Abstract

In this brief, a new low-voltage low-power CMOS voltage reference independent of temperature is presented. It is based on subthreshold, MOSFETs and on compensating a PTAT-based variable with the gate-source voltage of a subthreshold MOSFET. The circuit, designed with a standard 1.2-mum CMOS technology, exhibits an average voltage of about 295 mV with an average temperature coefficient of 119 ppm/degreesC in the range [-25, +125] degreesC. A brief study of gate-source voltage behavior with respect to temperature in subthreshold. MOSFETs is also reported.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11769/10236
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