The ion beam-induced modification of the electrical conductivity and the related structural features have been studied for thin films of poly-iso-quinazolindione (PIQ). The films, deposited onto specially designed test patterns, were irradiated by using 600 keV Ar+ ions in the fluence range between 1x10(14) to 1x10(15) ions/cm(2). The beam-induced chemical and structural modifications have been investigated by using X-ray Photoelectron Spectroscopy (XPS) and Raman Spectroscopy, while the modification of the electrical properties was followed by performing a complete set of I/V measurements. In particular, we obtained the evidence of the occurrence of a true semiconducting state for samples irradiated at fluence around 6x10(14) ions/cm(2), which exhibited the characteristic I/V features of a Schottky diode. Samples irradiated at higher fluence showed a good conductivity, with a saturation value of 4 x 10(2) Omega cm. The XPS data demonstrate that the modification of the electrical properties is due to the progressive formation with increasing ion fluence of a dense amorphous carbon network, while Raman data suggest the existence of different structural features, respectively for the semiconducting and the conducting phases. (C) 1999 Elsevier Science B.V. All rights reserved.

Structural modifications and electrical properties in ion-irradiated polyimide

MARLETTA, Giovanni
1999-01-01

Abstract

The ion beam-induced modification of the electrical conductivity and the related structural features have been studied for thin films of poly-iso-quinazolindione (PIQ). The films, deposited onto specially designed test patterns, were irradiated by using 600 keV Ar+ ions in the fluence range between 1x10(14) to 1x10(15) ions/cm(2). The beam-induced chemical and structural modifications have been investigated by using X-ray Photoelectron Spectroscopy (XPS) and Raman Spectroscopy, while the modification of the electrical properties was followed by performing a complete set of I/V measurements. In particular, we obtained the evidence of the occurrence of a true semiconducting state for samples irradiated at fluence around 6x10(14) ions/cm(2), which exhibited the characteristic I/V features of a Schottky diode. Samples irradiated at higher fluence showed a good conductivity, with a saturation value of 4 x 10(2) Omega cm. The XPS data demonstrate that the modification of the electrical properties is due to the progressive formation with increasing ion fluence of a dense amorphous carbon network, while Raman data suggest the existence of different structural features, respectively for the semiconducting and the conducting phases. (C) 1999 Elsevier Science B.V. All rights reserved.
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11769/11381
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 42
  • ???jsp.display-item.citation.isi??? 31
social impact