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EnglishIn this work we report the first experimental evidence that the balance between dynamic crystallization and amorphization is influenced by the presence of dopants through a detailed study on the effects produced by energetic ion beam irradiation on partially damaged, doped Si crystals. Predamaging was produced by room temperature 150 keV Au+ implantations to a dose of 2 x 10(13)/cm2 onto undoped, B-doped, and P-doped <100> oriented Si single crystals. The doping species were present in the samples at concentrations in the range 1.5 x 10(20) -2 x 10(21)/cm3. The low dose Au implants resulted in the formation of small damage clusters embedded in a defect-free crystal matrix. Samples were subsequently irradiated by 600 keV Kr2+ ions at different doses and at temperatures in the range 350-500 K. In the case of undoped samples a reordering of the damage clusters is observed for substrate temperatures above 420 K (critical temperature). At lower temperatures damage accumulation is observed. Doping strongly influences the balance between damage accumulation and reordering: the critical temperature becomes 390 K for P-doped samples at a concentration of approximately 2 x 10(20) P/cm2 and 360 K for P-doped samples at a concentration of approximately 2 x 10(21)/cm3. This behavior is discussed and explained on the basis of a phenomenological model.
| Titolo: | INFLUENCE OF DOPING ON ION-INDUCED GROWTH AND SHRINKAGE OF PARTIAL DAMAGE IN SILICON |
| Autori interni: | |
| Data di pubblicazione: | 1991 |
| Rivista: | |
| Abstract: | In this work we report the first experimental evidence that the balance between dynamic crystallization and amorphization is influenced by the presence of dopants through a detailed study on the effects produced by energetic ion beam irradiation on partially damaged, doped Si crystals. Predamaging was produced by room temperature 150 keV Au+ implantations to a dose of 2 x 10(13)/cm2 onto undoped, B-doped, and P-doped <100> oriented Si single crystals. The doping species were present in the samples at concentrations in the range 1.5 x 10(20) -2 x 10(21)/cm3. The low dose Au implants resulted in the formation of small damage clusters embedded in a defect-free crystal matrix. Samples were subsequently irradiated by 600 keV Kr2+ ions at different doses and at temperatures in the range 350-500 K. In the case of undoped samples a reordering of the damage clusters is observed for substrate temperatures above 420 K (critical temperature). At lower temperatures damage accumulation is observed. Doping strongly influences the balance between damage accumulation and reordering: the critical temperature becomes 390 K for P-doped samples at a concentration of approximately 2 x 10(20) P/cm2 and 360 K for P-doped samples at a concentration of approximately 2 x 10(21)/cm3. This behavior is discussed and explained on the basis of a phenomenological model. |
| Handle: | http://hdl.handle.net/20.500.11769/11589 |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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