Highly Er-doped Yb-Y disilicates thin films grown on c-Si willbe presented. The approach has permitted to vary independently theconcentrations of both active rare earths, Er and Yb, and to effectivelycontrol the Er sensitization from Yb ions. We will demonstrate that thesefilms are stable, having a uniform distribution of the chemical componentsthroughout their thickness and a favored crystallization of the α-phase,which is the most optically efficient. We verified that this crystallization canbe ascribed to a densification of the material and to the mobility locallyintroduced by ion implantation. Finally we will show a strong PL emissionat 1.54 μm, associated to the Yb-Er energy transfer mechanism, without anydeleterious energy back-transfer. These properties make this new class ofthin films a valuable and promising approach for the realization of efficientplanar amplifiers.
|Titolo:||Structural and optical properties of highly Er-doped Yb-Y disilicate thin films|
|Data di pubblicazione:||2013|
|Appare nelle tipologie:||1.1 Articolo in rivista|