High-quality Pr2O3 high-k thin films with very promising electrical properties have been prepared by metal-organic chemical vapor deposition on Si(100) substrates. The most critical factor for selective and reproducible Pr2O3 film formation is the oxygen partial pressure in the reaction chamber. X-ray (see Figure) and transmission electron microscopy diffraction patterns show that the oxide layer grows with a hexagonal random structure.
A simple route to the synthesis of Pr2O3 high-k thin films
MALANDRINO, Graziella;
2003-01-01
Abstract
High-quality Pr2O3 high-k thin films with very promising electrical properties have been prepared by metal-organic chemical vapor deposition on Si(100) substrates. The most critical factor for selective and reproducible Pr2O3 film formation is the oxygen partial pressure in the reaction chamber. X-ray (see Figure) and transmission electron microscopy diffraction patterns show that the oxide layer grows with a hexagonal random structure.File in questo prodotto:
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