Multilayer structures LaAlO3/Pt(100) and CeO2(100)/Pt(100) have been grown on Hastelloy C276 by metallorganic chemical vapor deposition. The volatile beta -diketonate Pt(acac)(2) precursor has been used to grow Pt films at 280 degreesC. They are (100) oriented with very smooth and homogeneous surfaces. The second-generation lanthanum and cerium precursors (M(hfa)(3). diglyme) [M = La(III), Ce(III)] have been successfully used for growing LaAlO3 and CeO2 layers on Pt(100). A two-step route has been used for LaAlO3 since there is evidence of severe interdiffusion adopting a one-step, higher temperature approach.  oriented CeO2 films can be easily deposited on Pt(100) at 450 degreesC. (C) 2001 The Electrochemical Society.
|Titolo:||Fabrication of LaAlO3/Pt(100)/Hastelloy C276 and CeO2(100)/Pt(100)/Hastelloy C276 multilayers by metallorganic chemical vapor deposition|
|Autori interni:||MALANDRINO, Graziella|
|Data di pubblicazione:||2001|
|Rivista:||JOURNAL OF THE ELECTROCHEMICAL SOCIETY|
|Appare nelle tipologie:||1.1 Articolo in rivista|