High-k polycrystalline Pr(2)O(3) thin films have been deposited by metal organic chemical vapor deposition (MOCVD) technique on Si(001) and 4H-SiC(0001) substrates. MOCVD processes have been carried out from the Pr(tmhd)(3) (H-tmhd = 2,2,6,6-tetramethyl-3,5-heptandione) precursor. Complete structural and morphological characterization of films has been carried out using several techniques (X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM)). Polycrystalline Pr(2)O(3) films have been obtained and at the interface a Praseodymium silicate amorphous layer has been observed on both substrates. The electrical properties of the dielectric praseodymium films have been evaluated. (c) 2006 Elsevier Ltd. All rights reserved.
Praseodymium based high-k dielectrics grown on Si and SiC substrates
MALANDRINO, Graziella;
2006-01-01
Abstract
High-k polycrystalline Pr(2)O(3) thin films have been deposited by metal organic chemical vapor deposition (MOCVD) technique on Si(001) and 4H-SiC(0001) substrates. MOCVD processes have been carried out from the Pr(tmhd)(3) (H-tmhd = 2,2,6,6-tetramethyl-3,5-heptandione) precursor. Complete structural and morphological characterization of films has been carried out using several techniques (X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM)). Polycrystalline Pr(2)O(3) films have been obtained and at the interface a Praseodymium silicate amorphous layer has been observed on both substrates. The electrical properties of the dielectric praseodymium films have been evaluated. (c) 2006 Elsevier Ltd. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
