New high-k dielectric thin films have become of increasing interest over the last few years in the search for an alternative material to SiO(2) gate insulators in MOS devices. Lanthanide oxides have been studied as potential candidates for SiO(2) replacement. In this review, a description of the different CVD approaches to fabricating praseodymium oxide and silicate films with dielectric properties is presented. In particular, thermally activated and liquid-injection metal-organic (MO) CVD as well as atomic layer deposition (ALD), developed in recent years, are discussed. Examples highlighting the importance of different praseodymium precursors oil the deposited phases are given. Special emphasis is placed upon deposition parameters crucial to obtain Pr(2)O(3) films and upon interfacial characterization. In addition, dielectric properties have been correlated to structural and compositional characteristics of praseodymium-containing films.
|Titolo:||An MOCVD approach to high-k praseodymium-based films|
|Data di pubblicazione:||2006|
|Appare nelle tipologie:||1.1 Articolo in rivista|