An X-ray photoemission spectroscopy (XPS) study at different takeoff angles of the derivatized surface resulting after prolonged (2 h) exposure of hydrogen-terminated 1 x 1-reconstructed (100)-oriented silicon to liquid 1-octyne at 170 degreesC has been carried out. The experimental data may be interpreted assuming that: (1) the grafting occurs through the formation of Si-C bonds; (2) in the considered conditions, one pi bond of the octyne has a large survival probability after the grafting; and (3) side reactions leading to Si-O-C or Si-C(O) moieties are also active. (C) 2003 Elsevier B.V. All rights reserved.
|Titolo:||X-ray photoemission spectroscopy study at different takeoff angles of hydrosilation of 1-alkynes at hydrogen-terminated 1 x 1-reconstructed (100)-oriented silicon|
|Data di pubblicazione:||2003|
|Appare nelle tipologie:||1.1 Articolo in rivista|