An O-2 remote plasma metal organic chemical vapor deposition (RP-MOCVD) route is presented for tailoring the structural, morphological, and optical properties of Er2O3 thin films grown on Si(100) using the tris(isopropylcyclopentadienyl)erbium precursor. The RP-MOCVD approach produced highly (100)-oriented, dense, and mechanically stable Er2O3 films with columnar structure.

Plasma ehnancement of metalorganic chemical vapor deposition and properties of Er2O3 nanostructured thin films

MALANDRINO, Graziella;
2007

Abstract

An O-2 remote plasma metal organic chemical vapor deposition (RP-MOCVD) route is presented for tailoring the structural, morphological, and optical properties of Er2O3 thin films grown on Si(100) using the tris(isopropylcyclopentadienyl)erbium precursor. The RP-MOCVD approach produced highly (100)-oriented, dense, and mechanically stable Er2O3 films with columnar structure.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/20.500.11769/12618
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