Growth kinetics of Cu2O and CuO films has been studied using the Cu-II acetylacetonate precursor in a low-pressure (11.3 Torr) MOCVD reactor. Pure Cu2O forms in the 2.7-6 Torr P-O2 and 0-3 mTorr P(Cu(acac)2) ranges at deposition temperature of 300 degrees C. Beyond 3.74 Torr P-O2, Cu2O films show a [111] texturing. Conclusive evidence for the occurrence of a Langmuir-Hinshelwoold mechanism, involving non-competitively adsorbed reagents, has been obtained. Above 8 Torr P-O2 CuO films have been grown under a reaction rate limited regime at temperatures as low as 285 degrees C. The apparent activation energies are 18 +/- 2 kJ/mol and 22 +/- 3 kJ/mol at 0.7 and 2 mTorr P(Cu(acac)2), respectively, The present data are consistent with a kinetic model for CuO formation based on the surface reaction between reversibly adsorbed molecular Cu(acac)(2) and weakly adsorbed O-2. The dependence of kinetic parameters upon the temperature brings about a 40 +/- 6 kJ/mol value of the heat of adsorption of the molecular precursor. Homogeneous and smooth surfaces are associated with CuO (111) oriented films. Homogeneous surfaces with a greater grain size (0.2-0.4 mu m), are observed for CuO. Randomly oriented Cu2O samples are much less homogeneous with grain size ranging from 50 nm to 0.5 mu m.

Kinetic study of MOCVD fabrication of copper(I) and copper(II) oxide films

CONDORELLI, Guglielmo Guido;MALANDRINO, Graziella;
1999-01-01

Abstract

Growth kinetics of Cu2O and CuO films has been studied using the Cu-II acetylacetonate precursor in a low-pressure (11.3 Torr) MOCVD reactor. Pure Cu2O forms in the 2.7-6 Torr P-O2 and 0-3 mTorr P(Cu(acac)2) ranges at deposition temperature of 300 degrees C. Beyond 3.74 Torr P-O2, Cu2O films show a [111] texturing. Conclusive evidence for the occurrence of a Langmuir-Hinshelwoold mechanism, involving non-competitively adsorbed reagents, has been obtained. Above 8 Torr P-O2 CuO films have been grown under a reaction rate limited regime at temperatures as low as 285 degrees C. The apparent activation energies are 18 +/- 2 kJ/mol and 22 +/- 3 kJ/mol at 0.7 and 2 mTorr P(Cu(acac)2), respectively, The present data are consistent with a kinetic model for CuO formation based on the surface reaction between reversibly adsorbed molecular Cu(acac)(2) and weakly adsorbed O-2. The dependence of kinetic parameters upon the temperature brings about a 40 +/- 6 kJ/mol value of the heat of adsorption of the molecular precursor. Homogeneous and smooth surfaces are associated with CuO (111) oriented films. Homogeneous surfaces with a greater grain size (0.2-0.4 mu m), are observed for CuO. Randomly oriented Cu2O samples are much less homogeneous with grain size ranging from 50 nm to 0.5 mu m.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11769/12712
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