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EnglishThe recently observed magnetic properties of the compensated Si:P,B and uncompensated Si:P are discussed in the light of a statistical mean field approach to the disordered Hubbard Hamiltonian. Besides giving an explanation for the observed enhancement of the local moment formation in the compensated materials, the model predicts the correct behaviour for the susceptibility as a function of the impurity density. In agreement with the experimental findings a larger persistence of the magnetic properties at high density is expected for larger compensation values.
| Titolo: | DISORDER-INDUCED LOCAL MOMENT ENHANCEMENT IN COMPENSATED SI-P,B |
| Autori interni: | |
| Data di pubblicazione: | 1995 |
| Rivista: | |
| Citazione: | DISORDER-INDUCED LOCAL MOMENT ENHANCEMENT IN COMPENSATED SI-P,B / SIRINGO F. - In: PHYSICS LETTERS A. - ISSN 0375-9601. - 205:2-3(1995), pp. 229-232. |
| Abstract: | The recently observed magnetic properties of the compensated Si:P,B and uncompensated Si:P are discussed in the light of a statistical mean field approach to the disordered Hubbard Hamiltonian. Besides giving an explanation for the observed enhancement of the local moment formation in the compensated materials, the model predicts the correct behaviour for the susceptibility as a function of the impurity density. In agreement with the experimental findings a larger persistence of the magnetic properties at high density is expected for larger compensation values. |
| Handle: | http://hdl.handle.net/20.500.11769/13348 |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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