The surface concentration of Sb in doped TiO2 rutile ceramics (T1-5/4xSbxO2 0 < x < 0.1), has been measured by means of angle-resolved core level X-ray photoelectron spectroscopy (AR-XPS). Depth profiles have been obtained by alternating Ar+-ion bombardment with core level measurements. At low doping levels Sb segregates by substitutional replacement of Ti in a large number of ionic planes whilst at higher Sb doping levels there is evidence of a new Sb-Ti-O amorphous surface phase whose thickness involves about five ionic planes. A rationalization of the monotonic decrease of the work function throughout the doping range studied has been proposed,
Surface segregation of Sb in doped TiO2 rutile
GULINO, Antonino;CONDORELLI, Guglielmo Guido;
1995-01-01
Abstract
The surface concentration of Sb in doped TiO2 rutile ceramics (T1-5/4xSbxO2 0 < x < 0.1), has been measured by means of angle-resolved core level X-ray photoelectron spectroscopy (AR-XPS). Depth profiles have been obtained by alternating Ar+-ion bombardment with core level measurements. At low doping levels Sb segregates by substitutional replacement of Ti in a large number of ionic planes whilst at higher Sb doping levels there is evidence of a new Sb-Ti-O amorphous surface phase whose thickness involves about five ionic planes. A rationalization of the monotonic decrease of the work function throughout the doping range studied has been proposed,| File | Dimensione | Formato | |
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