The thermal behavior of the power Darlington transistors made by SGS-ATES is analyzed. The mathematical model of this process is given by the Fourier heat equation whose numerical integration is effected by the finite difference method. Simulation gives transient and steady results which agree perfectly with the experimental data. Finally, the CAD application to this device is widely discussed.
|Titolo:||COMPUTER AIDED THERMAL DESIGN OF POWER ELECTRONIC DEVICES.|
|Data di pubblicazione:||1981|
|Appare nelle tipologie:||1.1 Articolo in rivista|