We illustrate the behaviour of As when it is confined, by the implantation technique, in a SiO2(70nm)/Si(30nm)/ SiO2(70nm) multilayer and its spatial redistribution when annealing processes are performed. By Rutherford backscattering spectrometry and Z-contrast transmission electron microscopy we found an As accumulation at the Si/SiO2 interfaces and at the Si grain boundaries with no segregation of the As in the Si layer. Such an effect is in agreement with a model that assumes a traps distribution in the Si in the first 2–3 nm above the SiO2/Si interfaces and along the Si grain boundaries. The traps concentration at the Si/SiO2 interfaces was estimated in 1014 traps/cm2. The outlined results can open perspectives on the doping properties of As in Si nanocrystals, whose applications in nanoelectronics and optoelectronics are widely investigated.

Analyses of the As doping of SiO2/Si/SiO2 nanostructures

RUFFINO, FRANCESCO;MIRITELLO, MARIA PILAR;GRIMALDI, Maria Grazia
2011

Abstract

We illustrate the behaviour of As when it is confined, by the implantation technique, in a SiO2(70nm)/Si(30nm)/ SiO2(70nm) multilayer and its spatial redistribution when annealing processes are performed. By Rutherford backscattering spectrometry and Z-contrast transmission electron microscopy we found an As accumulation at the Si/SiO2 interfaces and at the Si grain boundaries with no segregation of the As in the Si layer. Such an effect is in agreement with a model that assumes a traps distribution in the Si in the first 2–3 nm above the SiO2/Si interfaces and along the Si grain boundaries. The traps concentration at the Si/SiO2 interfaces was estimated in 1014 traps/cm2. The outlined results can open perspectives on the doping properties of As in Si nanocrystals, whose applications in nanoelectronics and optoelectronics are widely investigated.
Si nanocrystals; As; Doping
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/20.500.11769/13770
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