We have studied the growth of room-temperature sputtered Pd films on 6H-SiC by using the atomic force microscopy technique. In particular, we analyzed the Pd film surface morphology as a function of the film thickness from 3 to 72 nm observing that the Pd grows initially thickness 2–12 nm as three-dimensional 3D islands. Then thickness 12–36 nm the Pd film morphology evolves from compact 3D islands to partially coalesced wormlike structures, followed 36–60 nm by a percolation morphology and finally to a continuous and rough film at 72 nm. The application of the interrupted coalescence model allowed us to evaluate the critical mean islands diameter Rc 6.6 nm for the partial coalescence process while the application of the kinetic freezing model allowed us to evaluate the room-temperature Pd surface diffusion coefficient Ds1.4 10−17 m2 / s on 6H-SiC. Finally, the application of the Vincent’s model allowed us to evaluate the critical Pd coverage Pc=68% for the percolation transition.
|Titolo:||Island-to-percolation transition during the room-temperature growth of sputtered nanoscale Pd films on hexagonal SiC|
|Data di pubblicazione:||2010|
|Citazione:||Island-to-percolation transition during the room-temperature growth of sputtered nanoscale Pd films on hexagonal SiC / Ruffino F; Grimaldi MG. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - 107:7(2010), pp. 074301/1-074301/6.|
|Appare nelle tipologie:||1.1 Articolo in rivista|