High electric fields, that are characteristic of sub-micron devices, produce highly energeticelectrons, lack of equilibrium between electrons and phonons and high rates of heatgeneration. This regime can be described using an extended hydrodynamic model, which isformed by a set of conservation laws of hyperbolic-type with stiff relaxation terms. In order toovercome this numerical difficulty, an implicit–explicit Runge–Kutta scheme has been used
Titolo: | Electro-thermal behaviour of a sub-micron silicon diode | |
Autori interni: | ||
Data di pubblicazione: | 2013 | |
Rivista: | ||
Handle: | http://hdl.handle.net/20.500.11769/14125 | |
Appare nelle tipologie: | 1.1 Articolo in rivista |
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