Polymer/metal hybrid multilayers modified Schottky devices

Insulating, polymethylmethacrylate (PMMA), and semiconducting, poly(3-hexylthiophene)(P3HT), nanometer thick polymers/Au nanoparticles based hybrid multilayers (HyMLs) werefabricated on p-Si single-crystal substrate. An iterative method, which involves, respectively, spincoating(PMMA and P3HT deposition) and sputtering (Au nanoparticles deposition) techniques toprepare Au/HyMLs/p-Si Schottky device, was used. The barrier height and the ideality factor ofthe Au/HyMLs/p-Si Schottky devices were investigated by current-voltage measurements in thethickness range of 1–5 bilayers. It was observed that the barrier height of such hybrid layeredsystems can be tuned as a function of bilayers number and its evolution was quantified andanalyzed.