Insulating, polymethylmethacrylate (PMMA), and semiconducting, poly(3-hexylthiophene)(P3HT), nanometer thick polymers/Au nanoparticles based hybrid multilayers (HyMLs) werefabricated on p-Si single-crystal substrate. An iterative method, which involves, respectively, spincoating(PMMA and P3HT deposition) and sputtering (Au nanoparticles deposition) techniques toprepare Au/HyMLs/p-Si Schottky device, was used. The barrier height and the ideality factor ofthe Au/HyMLs/p-Si Schottky devices were investigated by current-voltage measurements in thethickness range of 1–5 bilayers. It was observed that the barrier height of such hybrid layeredsystems can be tuned as a function of bilayers number and its evolution was quantified andanalyzed.

Polymer/metal hybrid multilayers modified Schottky devices

Vanna, Torrisi;Francesco, Ruffino;ISGRO', GIUSEPPE;CRUPI, ISODIANA;Giovanni Calogero, Li Destri Nicosia;Maria Grazia, Grimaldi;Giovanni, Marletta
2013

Abstract

Insulating, polymethylmethacrylate (PMMA), and semiconducting, poly(3-hexylthiophene)(P3HT), nanometer thick polymers/Au nanoparticles based hybrid multilayers (HyMLs) werefabricated on p-Si single-crystal substrate. An iterative method, which involves, respectively, spincoating(PMMA and P3HT deposition) and sputtering (Au nanoparticles deposition) techniques toprepare Au/HyMLs/p-Si Schottky device, was used. The barrier height and the ideality factor ofthe Au/HyMLs/p-Si Schottky devices were investigated by current-voltage measurements in thethickness range of 1–5 bilayers. It was observed that the barrier height of such hybrid layeredsystems can be tuned as a function of bilayers number and its evolution was quantified andanalyzed.
Polymer; Au nanoparticles; Schottky device
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11769/14241
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