This paper reports about the mechanism of porous formation in bulk crystalline Ge wafers, polycrystalline and amorphous Ge thin films as a consequence of Ge+ ion implantation at 300 keV, Ge+ fluence 5x1015 cm2 or 1x1016 cm2. Cross-section scanning electron microscopy and Rutherford backscattering spectrometry were used to characterize the nucleation mechanism of the nanoporous structure by revealing a uniform mechanism in the amorphous Ge thin layers, and a heterogeneous growth mechanism in bulk crystalline and poly-crystalline Ge substrates. The uniform growth is due to the presence of voids distributed over all the as-deposited amorphous films, which provide nucleation sites for the formation of the porous structure. Instead, the heterogeneous growth is catalyzed by the free surface and the film/substrate interface.

Influence of microstructure on voids nucleation in nanoporous Ge

ROMANO, LUCIA;GRIMALDI, Maria Grazia
2013-01-01

Abstract

This paper reports about the mechanism of porous formation in bulk crystalline Ge wafers, polycrystalline and amorphous Ge thin films as a consequence of Ge+ ion implantation at 300 keV, Ge+ fluence 5x1015 cm2 or 1x1016 cm2. Cross-section scanning electron microscopy and Rutherford backscattering spectrometry were used to characterize the nucleation mechanism of the nanoporous structure by revealing a uniform mechanism in the amorphous Ge thin layers, and a heterogeneous growth mechanism in bulk crystalline and poly-crystalline Ge substrates. The uniform growth is due to the presence of voids distributed over all the as-deposited amorphous films, which provide nucleation sites for the formation of the porous structure. Instead, the heterogeneous growth is catalyzed by the free surface and the film/substrate interface.
2013
Germanium; Ion implantation; Porous materials
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11769/15681
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