A hydrodynamic model describing the electron transport in silicon carbide semiconductors, coupled with the heating of the crystal lattice is presented. It has been obtained by taking the moments of the coupled Boltzmann equations for the electrons and phonons, and by using the Maximum Entropy Principle in order to determine the transport coefficients and the constitutive equations. Simulation results in the bulk case are shown.

Hydrodynamic Model for Silicon Carbide Semiconductors including crystal heating

MUSCATO, Orazio;DI STEFANO, VINCENZA
2015

Abstract

A hydrodynamic model describing the electron transport in silicon carbide semiconductors, coupled with the heating of the crystal lattice is presented. It has been obtained by taking the moments of the coupled Boltzmann equations for the electrons and phonons, and by using the Maximum Entropy Principle in order to determine the transport coefficients and the constitutive equations. Simulation results in the bulk case are shown.
silicon carbide; hydrodynamic; heating
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11769/18437
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