A hydrodynamic model describing the electron transport in silicon carbide semiconductors, coupled with the heating of the crystal lattice, is presented. It has been obtained by taking the moments of the coupled Boltzmann equations for the electrons and phonons, and by using the maximum entropy principle, where the transport coefficients are explicitly determined. Simulation results in the bulk case are shown.

Electrothermal transport in silicon carbide semiconductors via a hydrodynamic model

MUSCATO, Orazio;Di Stefano V.
2015-01-01

Abstract

A hydrodynamic model describing the electron transport in silicon carbide semiconductors, coupled with the heating of the crystal lattice, is presented. It has been obtained by taking the moments of the coupled Boltzmann equations for the electrons and phonons, and by using the maximum entropy principle, where the transport coefficients are explicitly determined. Simulation results in the bulk case are shown.
2015
silicon carbide; hydrodynamic; thermal effetcs
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11769/18597
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