A hydrodynamic model describing the electron transport in silicon carbide semiconductors, coupled with the heating of the crystal lattice, is presented. It has been obtained by taking the moments of the coupled Boltzmann equations for the electrons and phonons, and by using the maximum entropy principle, where the transport coefficients are explicitly determined. Simulation results in the bulk case are shown.

Electrothermal transport in silicon carbide semiconductors via a hydrodynamic model

MUSCATO, Orazio;Di Stefano V.
2015

Abstract

A hydrodynamic model describing the electron transport in silicon carbide semiconductors, coupled with the heating of the crystal lattice, is presented. It has been obtained by taking the moments of the coupled Boltzmann equations for the electrons and phonons, and by using the maximum entropy principle, where the transport coefficients are explicitly determined. Simulation results in the bulk case are shown.
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/20.500.11769/18597
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 10
  • ???jsp.display-item.citation.isi??? 10
social impact