A hydrodynamic model describing the electron transport in silicon carbide semiconductors, coupled with the heating of the crystal lattice, is presented. It has been obtained by taking the moments of the coupled Boltzmann equations for the electrons and phonons, and by using the maximum entropy principle, where the transport coefficients are explicitly determined. Simulation results in the bulk case are shown.
|Titolo:||Electrothermal transport in silicon carbide semiconductors via a hydrodynamic model|
|Data di pubblicazione:||2015|
|Appare nelle tipologie:||1.1 Articolo in rivista|