The excellent physical and chemical properties and the radiation hardness of silicon carbide (SiC) renderthis material particularly suitable for the realization of radiation detectors. In this paper we describe themain properties of SiC and the processes needed to realize good performance detectors. To this purpose,we made SiC Schottky diodes that were electrical characterized by using different techniques. In orderto test the radiation hardness, the diodes were irradiated with different ion beams and the analysis ofthe electrical measurements allowed to identify the defects responsible of the device degradation. Thesedetectors have been used to monitor the multi-MeV ions of the plasma emitted by irradiation of varioustargets with 300-ps laser at high intensity (1016 W/cm2). These measurements highlighted that the use ofSiC detectors enhances the sensitivity to ions detection due to the cutting of the visible and soft ultravioletradiation emitted from plasma. The small rise time and the proportionality to ion energy evidence thatthese detectors are a powerful tool for the characterization of ion generated by high-intensity pulsed laser.
|Titolo:||Laser plasma monitored by silicon carbide detectors|
|Data di pubblicazione:||2015|
|Citazione:||Laser plasma monitored by silicon carbide detectors / Calcagno, Lucia; Musumeci, Paolo; Zimbone, Massimo; La Via, F.. - In: RADIATION EFFECTS AND DEFECTS IN SOLIDS. - ISSN 1042-0150. - 170:4(2015), pp. 303-324.|
|Appare nelle tipologie:||1.1 Articolo in rivista|