The thermal evolution of defects induced in 4H–SiC by multiple implantation of C ions was investigated by Low Temperature Photoluminescence in the temperature range 450–1000 K. The photoluminescence spectra show sharp luminescent lines (alphabet lines) in the wavelength range 426–440 nm upon irradiation and thermal treatment at 450 K induces the appearance of a new line at 427 nm (DI centre). The trend shown by the luminescence lines as a function of the temperature is quite complex. The alphabet lines intensity increases up to 850 K, whereas at higher temperature decreases with an activation energy of 2.0 eV, suggesting that the defect, responsible for these lines, is the Si-vacancy. The luminescence yield of DI centre is always increasing as a function of the temperature, with a higher slope from 750 K, suggesting a correlation to the reconfiguration and to the annealing of point defects.
|Titolo:||Defects annealing in 4H-SiC epitaxial layer probed by low temperature photoluminescence|
|Data di pubblicazione:||2012|
|Citazione:||Defects annealing in 4H-SiC epitaxial layer probed by low temperature photoluminescence / Litrico G; Zimbone M; Musumeci P; Calcagno L. - In: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. - ISSN 1369-8001. - 15:6(2012), pp. 740-743.|
|Appare nelle tipologie:||1.1 Articolo in rivista|