The diffusion of boron in nanocrystalline silicon carbide (nc-SiC) films with a grain size of 4-7 nm is studied using a poly-Si boron source. Diffusion is found to be much faster than in monocrystalline SiC as it takes place within the grain boundary (GB) network. Drive-in temperatures of 900-1000 degrees C are suitable for creating shallow boron profiles up to 100 nm deep, while 1100 degrees C is sufficient to flood the 200 nm thick films with boron. From the resulting plateau at 1100 degrees C a boron segregation coefficient of 28 between nc-SiC and the Si substrate, as well as a GB boron solubility limit of 0.2 nm(-2) is determined. GB diffusion in the bulk of the films is Fickian and thermally activated with D-GB(T) = (3.1 - 5.6) X 10(7)expd (-5.03 +/- 0.16 eV/k(B)T) cm(2)s(-1). The activation energy is interpreted in terms of a trapping mechanism at dangling bonds. Higher boron concentrations are present at the nc-SiC surface and are attributed to immobilized boron. (C) 2014 AIP Publishing LLC.
|Titolo:||Boron diffusion in nanocrystalline 3C-SiC|
|Data di pubblicazione:||2014|
|Citazione:||Boron diffusion in nanocrystalline 3C-SiC / Schnabel M; Weiss C; Canino M; Rachow T; Loper P; Summonte C; Mirabella S; Janz S; Wilshaw PR. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 104:21(2014).|
|Appare nelle tipologie:||1.1 Articolo in rivista|