Phase-selective Route to V-O Film Formation: A Systematic MOCVD Study Into the Effects of Deposition Temperature on Structure and Morphology

A systematic study into the MOCVD of V-​O films using the vanadyl-​acetylacetonate [VO(acac)​2] precursor is carried out. The films are prepd. via low pressure MOCVD on Si(001) substrates. The nature and quality of films are examd. by varying operational parameters, e.g., deposition temp., precursor vaporization rate, and flow of oxygen reacting gas. X-​ray diffraction data point to the formation of cryst. films in the range 200-​550 °C. Outside of this temp. ranges amorphous phases were obtained. Field-​emission scanning electron microscope (FESEM) images indicate very homogeneous surfaces with grain shape and dimensions depending on operational conditions. Energy dispersive X-​ray (EDX) and XPS analyses point to the absence of any C contamination.